sot-323 plastic-encapsulate mosfets CJ3139KW p-channel power mosfet generral description this single p-channel mosfet has been designed using advanced power trench process to optimize the r ds(on). feature z high-side switching z low on-resistance z low threshold z fast switching speed application z drivers:relays, solenoids, lamps, hammers, displays, memories z battery operated systems z power supply converter circuits z load/power switching cell phones, pagers marking: 39k maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v dss -20 gate-source voltage v gs 12 v drain current -continuous i d -0.66 drain current -pulsed(note1) i dm -2.64 a power dissipation (note 2) p d 200 mw thermal resistance from junction to ambient r ja 625 /w storage temperature t j 150 junction temperature t stg -55 ~+150 so t -323 1. gate 2. source 3. drain 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max unit on/off states drain-source breakdown voltage v (br)dss v gs = 0v, i d =-250a -20 gate-threshold voltage(note 3) v gs(th) v ds =v gs , i d =-250a -0.35 - 1.1 v gate-body leakage current i gss v ds =0v, v gs =12v 20 a zero gate voltage drain current i dss v ds =-20v, v gs =0v -1 a v gs =-4.5v, i d =-1a 520 v gs =-2.5v, i d =-800ma 700 drain-source on-state resistance(note 3) r ds(on) v gs =-1.8v, i d =-500ma 950 m ? forward transconductance g fs v ds =-10v, i d =-540ma 0.8 s dynamic characteristics(note 4) input capacitance c iss 170 output capacitance c oss 25 reverse transfer capacitance c rss v ds =-16v,v gs =0v,f =1mhz 15 pf switching times (note 4) turn-on delay time t d (on) 9 rise time t r 5.8 turn-off delay time t d(off) 32.7 fall time t f v dd =-10v, i d =-200ma, v gs =-4.5v,r g =10 ? 20.3 ns drain-source diode characteristics drain-source diode forward voltage (note 3) v sd i s =-0.5a, v gs = 0v -1.2 v notes: 1. repetitive rating: pulse width lim ited by maximum junction temperature. 2. this test is performed with no heat sink at t a =25 . 3. pulse test : pulse width 300s, duty cycle 0.5%. 4. these parameters have no way to verify. 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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